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PSI has developed advanced electro-optic (EO) modulators in thin-film lithium niobate on insulator (LNOI) that have operated up to 500 GHz. In addition, PSI has demonstrated a 0.875 Volt, half-wave voltage device. With these two record setting modulators, PSI is a leading company in the development of LNOI modulators that include phase only, intensity modulated, and single sideband suppressed carrier (S3C) devices. These devices offer extremely high EO conversion efficiency, broad operational bandwidth and inherent superior material properties such as high optical power handling capability and high linearity make the PSI LNOI modulators ideal for a wide range of analog photonic and 5G applications.
Also, PSI has a dedicated 3,000+ cleanroom specifically for LNOI devices as well as Silicon Nitride and Silicon photonic devices with a specialization in their hybrid integration into chip-scale systems.